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Tailored Products of Ecdm-100E/400E

Applying HBM, MM or CDM (F-CDM or D-CDM) stress to the bonding pads of bigger IC die via manipulators, measures endurance against them. Damage is detected by the other IC tester. Low cost system is expected though manual operation. Wafer test may be possible as well as sliced die test. TLP configuration is available.

In these days, very ESD fragile devices such as MR head and GaAs IC are increasing. To measure the ESD endurance of these devices, traditional ESD stressor for IC and LSI is not suitable. Device may be damaged by contact of ESD zapping pin to the DUT or by relay noise in ESD generator. Ecdm-100E/400E can be trimmed for these fragile applications. Especially, trimmed Ecdm-100E is well accepted in the MR head applications. HBM, MM, CDM(Field induced CDM and Direct Charging CDM) are available.

V-I curve measurement using short width TLP (Transmission Line Pulse) is popular as the characterization procedure of the ESD protection element. Ecdm100E/400E can be configured for this application. Though manual measurement is standard, you may add GP-IB so that PC controlled test and curve plot may be possible if you develop your own program.